Lateral straggling of implanted aluminum in 4H-SiC

Solid-state microwave annealing of ion-implanted 4H–SiC

Solid-state microwave annealing was performed at temperatures up to 2120 C for 30 s on ion-implanted 4H–SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 C is 2.65 nm for 10 lm · 10 lm atomic force microscopy scans. The sheet resistances measured on Aland P-implanted 4H–SiC, annealed by microwaves, are lower than the best conventional furnace anneali...

Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates

Model Simulation and Verification of a Vertical Double Implanted (dimos) Transistor in 4h-sic

Silicon-based switching devices have reached the theoretical limitations for high power and high temperature applications whereas silicon carbide (SiC) has emerged as an alternate material system to overcome the limitations and can be used in extreme environment. In this paper, a vertical DIMOS transistor structure, a switching device in 4H-SiC material system, is presented. The model takes int...

Design of 1.7 to 14kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC

In this paper, a high voltage normally-off trenched-and-implanted vertical JFET (TIVJFET) in 4H-SiC is investigated by way of two-dimensional numerical simulations. The structure is simple to fabricate and is expected to be able to achieve a high current density. Detailed designs are presented for 1.7kV to 14kV normally-off 4H-SiC VJFETs. A good agreement has been reached between computer model...

Correlation of Interface Characteristics to Electron Mobility in Channel- implanted 4H-SiC MOSFETs

To study mobility limiting mechanisms in (0001) 4H-SiC, lateral n-channel MOSFETs in p-implanted wells on n-type epitaxial layers were manufactured and additionally selectively shallow implanted with different nitrogen (N) doses in the channel region. The mobility was found to be limited by Columbic scattering at low electric fields. Further surface roughness scattering was considered as a poss...